Eizo Miyauchi : rechercher sur Z-Library

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Articles (39)
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Ion species and energy control of finely focused FIBs for maskless in situ microfabrication processes

Eizo Miyauchi, Hiroshi Arimoto, Hideki Kitada

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

1989

Langue:

english

Fichier:

PDF, 501 KB

english, 1989

Picosecond Characterization of InGaAs/InAlAs Resonant Tunneling Barrier Diode by Electro-Optic Sampling

Tackeuchi, Atsushi, Inata, Tsuguo, Muto, Shunichi, Miyauchi, Eizo

Journal:

Japanese Journal of Applied Physics

Année:

1989

Fichier:

PDF, 549 KB

1989

Superconducting Transition of In x Sn 1- x Te 1.02

Nakajima, Tetsuo, Isino, Masahiro, Miyauchi, Hidekazu, Kanda, Eizo

Journal:

Journal of the Physical Society of Japan

Année:

1973

Fichier:

PDF, 196 KB

1973

Growth and characterization of GaAs0.5Sb0.5 lattice-matched to InP by molecular beam epitaxy

Yoshiaki Nakata, Toshio Fujii, Adarsh Sandhu, Yoshihiro Sugiyama, Eizo Miyauchi

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 281 KB

english, 1988

Focused ion beam doping for GaAs MBE growth

Hisao Hashimoto, Akira Takamori, Hiroshi Arimoto, Tetsuo Morita, Eizo Miyauchi

Journal:

Microelectronic Engineering

Année:

1986

Langue:

english

Fichier:

PDF, 661 KB

english, 1986

Characterization of GaAsSb/InAlAs quantum-well structures lattice-matched to InP grown by molecular beam epitaxy

Nakata, Yoshiaki, Sugiyama, Yoshihiro, Ueda, Osamu, Sasa, Shigehiko, Fujii, Toshio, Miyauchi, Eizo

Journal:

Journal of Crystal Growth

Année:

1990

Langue:

english

Fichier:

PDF, 291 KB

english, 1990

Effects of ultrasound on cementoblast metabolism in vitro

Diego Araujo Dalla-Bona, Eiji Tanaka, Hiroko Oka, Eizo Yamano, Nobuhiko Kawai, Mutsumi Miyauchi, Takashi Takata, Kazuo Tanne

Journal:

Ultrasound in Medicine & Biology

Année:

2006

Langue:

english

Fichier:

PDF, 206 KB

english, 2006

Inhibitory effects of orally administrated liposomal bovine lactoferrin on the LPS-induced osteoclastogenesis

Miyauchi, Mutsumi, Furusyo, Hisako, Kawazoe, Aki, Ishikado, Atsushi, Makino, Taketoshi, Tanne, Kazuo, Tanaka, Eiji, Takata, Takashi, Yamano, Eizo

Journal:

Laboratory Investigation

Année:

2010

Langue:

english

Fichier:

PDF, 756 KB

english, 2010

Dependene of Focused Ion Beam Intensity Profile on Ion Species at Several Orders of Magnitude below the Peak Intensity

Miyauchi, Eizo, Arimoto, Hiroshi, Morita, Tetsuo, Hashimoto, Hisao

Journal:

Japanese Journal of Applied Physics

Année:

1987

Fichier:

PDF, 674 KB

1987

Maskless ion implantation technology for III–V compound semiconductors

Eizo Miyauchi, Hisao Hashimoto

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

1985

Langue:

english

Fichier:

PDF, 749 KB

english, 1985

Computor control of maskless ion implanter with AuSiBe LM ion source for III–V compound semiconductors

Eizo Miyauchi, Hiroshi Arimoto, Yasuo Bamba, Akira Takamori, Hisao Hashimoto

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

1985

Langue:

english

Fichier:

PDF, 944 KB

english, 1985

Maskless ion implantation system for three-dimensional fine doping structures in III–V compound semiconductors

Eizo Miyauchi, Hisao Hashimoto

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

1987

Langue:

english

Fichier:

PDF, 2.55 MB

english, 1987

The Effect of Removal of the Disc on the Friction in the Temporomandibular Joint

Eiji Tanaka, Diego A. Dalla-Bona, Tatsunori Iwabe, Nobuhiko Kawai, Eizo Yamano, Theo van Eijden, Masao Tanaka, Mutsumi Miyauchi, Takashi Takata, Kazuo Tanne

Journal:

Journal of Oral and Maxillofacial Surgery

Année:

2006

Langue:

english

Fichier:

PDF, 142 KB

english, 2006

Picosecond characterization of InGaAs/InAlAs resonant tunneling barriers grown by MBE

Shunichi Muto, Atsushi Tackeuchi, Tsuguo Inata, Eizo Miyauchi, Toshio Fujii

Journal:

Surface Science

Année:

1990

Langue:

english

Fichier:

PDF, 314 KB

english, 1990

Calculation of electronic structure and photoabsorption spectra of monosilane molecules SiH4, SiF4, and SiCl4

Ishikawa, Hideaki, Fujima, Kazumi, Adachi, Hirohiko, Miyauchi, Eizo, Fujii, Toshio

Journal:

The Journal of Chemical Physics

Année:

1991

Langue:

english

Fichier:

PDF, 1.03 MB

english, 1991

Application of focused ion beam technology to maskless ion implantation in a molecular beam epitaxy grown GaAs or AlGaAs epitaxial layer for three-dimensional pattern doping crystal growth

Miyauchi, Eizo

Journal:

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Année:

1986

Langue:

english

Fichier:

PDF, 913 KB

english, 1986

Scan speed effects on enhanced disordering of GaAs-AlGaAs superlattices by focused Si ion beam implantation

Ishida, Koji, Matsui, Kazunori, Fukunaga, Toshiaki, Kobayashi, Junji, Morita, Tetsuo, Miyauchi, Eizo, Nakashima, Hisao

Journal:

Applied Physics Letters

Année:

1987

Langue:

english

Fichier:

PDF, 625 KB

english, 1987

Selective Si and Be implantation in GaAs using a 100 kV mass-separating focused ion beam system with an Au–Si–Be liquid metal ion source

Miyauchi, Eizo

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Année:

1983

Langue:

english

Fichier:

PDF, 489 KB

english, 1983

Growth-Interrupted Interfaces in Multilayer MBE Growth of Gallium Arsenide

Takamori, Akira, Miyauchi, Eizo, Arimoto, Hiroshi, Bamba, Yasuo, Morita, Tetsuo, Hashimoto, Hisao

Journal:

Japanese Journal of Applied Physics

Année:

1985

Fichier:

PDF, 478 KB

1985

Fabrication of Index-Guided AlGaAs MQW Lasers by Selective Disordering Using Be Focused Ion Beam Implantation

Ishida, Koji, Takamori, Takeshi, Matsui, Kazunori, Fukunaga, Toshiaki, Morita, Tetsuo, Miyauchi, Eizo, Hashimoto, Hisao, Nakashima, Hisao

Journal:

Japanese Journal of Applied Physics

Année:

1986

Fichier:

PDF, 411 KB

1986

Thermal Diffusion of Buried Beryllium and Silicon Layer in GaAs Doped by Focused Ion Beam Implantation

Morita, Tetsuo, Kobayashi, Junji, Takamori, Takeshi, Takamori, Akira, Miyauchi, Eizo, Hashimoto, Hisao

Journal:

Japanese Journal of Applied Physics

Année:

1987

Fichier:

PDF, 610 KB

1987

Comparison of Lateral Resolution of Fine Stripes Beryllium and Boron Implanted by Focused Ion Beam in Si-Doped AlGaAs/GaAs Multiquantum Wells

Brillouet, Francois, Ishida, Koji, Morita, Tetsuo, Miyauchi, Eizo, Takamori, Takeshi, Nakashima, Hisao

Journal:

Japanese Journal of Applied Physics

Année:

1987

Fichier:

PDF, 584 KB

1987

Si Depth Profiles in Focused-Ion-Beam-Implanted GaAs

Bamba, Yasuo, Miyauchi, Eizo, Nakajima, Masato, Arimoto, Hiroshi, Takamori, Akira, Hashimoto, Hisao

Journal:

Japanese Journal of Applied Physics

Année:

1985

Fichier:

PDF, 511 KB

1985

Maskless all-UHV process for III-V compound semiconductors

Miyauchi, Eizo

Journal:

Critical Reviews in Solid State and Material Sciences

Année:

1991

Langue:

english

Fichier:

PDF, 1.40 MB

english, 1991

Novel Method for Measuring Intensity Distribution of Focused Ion Beams

Arimoto, Hiroshi, Takamori, Akira, Miyauchi, Eizo, Hashimoto, Hisao

Journal:

Japanese Journal of Applied Physics

Année:

1983

Fichier:

PDF, 525 KB

1983

A 100 kV Maskless Ion-Implantation System with an Au-Si-Be Liquid Metal Ion Source for III-V Compound Semiconductors

Miyauchi, Eizo, Arimoto, Hiroshi, Hashimoto, Hisao, Furuya, Tsuneo, Utsumi, Takao

Journal:

Japanese Journal of Applied Physics

Année:

1983

Fichier:

PDF, 455 KB

1983

Alignment Accuracy of Focused Ion Beam Implantation

Morita, Tetsuo, Arimoto, Hiroshi, Miyauchi, Eizo, Hashimoto, Hisao

Journal:

Japanese Journal of Applied Physics

Année:

1987

Langue:

english

Fichier:

PDF, 183 KB

english, 1987

Photon Stimulated Desorption from Finely Polished Metals Irradiated with Synchrotron Radiation

Miyauchi, Eizo, Okamura, Sigeru, Taguchi, Takao, Goto, Shunji, Hisatsugu, Tokushige

Journal:

Japanese Journal of Applied Physics

Année:

1991

Langue:

english

Fichier:

PDF, 844 KB

english, 1991

Cleaning of MBE GaAs Substrates by Hydrogen Radical Beam Irradiation

Takamori, Akira, Sugata, Sumio, Asakawa, Kiyoshi, Miyauchi, Eizo, Hashimoto, Hisao

Journal:

Japanese Journal of Applied Physics

Année:

1987

Langue:

english

Fichier:

PDF, 205 KB

english, 1987

Sn Ion Doping during GaAs MBE with Field Ion Gun

Bamba, Yasuo, Miyauchi, Eizo, Kuramoto, Kazuo, Takamori, Akira, Furuya, Tsuneo

Journal:

Japanese Journal of Applied Physics

Année:

1983

Langue:

english

Fichier:

PDF, 203 KB

english, 1983

Effect of Ambient Gases on Emission Properties of Pd-Ni-Si-Be-B LM Ion Source

Arimoto, Hiroshi, Miyauchi, Eizo, Hashimoto, Hisao

Journal:

Japanese Journal of Applied Physics

Année:

1987

Langue:

english

Fichier:

PDF, 396 KB

english, 1987

Lateral Spreads of Be and Si in GaAs Implanted with a Maskless Ion Implantation System

Miyauchi, Eizo, Arimoto, Hiroshi, Bamba, Yasuo, Takamori, Akira, Hashimoto, Hisao, Utsumi, Takao

Journal:

Japanese Journal of Applied Physics

Année:

1983

Langue:

english

Fichier:

PDF, 817 KB

english, 1983

Focused Si Ion Implantation in GaAs

Bamba, Yasuo, Miyauchi, Eizo, Arimoto, Hiroshi, Kuramoto, Kazuo, Takamori, Akira, Hashimoto, Hisao

Journal:

Japanese Journal of Applied Physics

Année:

1983

Langue:

english

Fichier:

PDF, 838 KB

english, 1983

GaAs Growth Using an MBE System Connected with a 100 kV UHV Maskless Ion Implanter

Takamori, Akira, Miyauchi, Eizo, Arimoto, Hiroshi, Bamba, Yasuo, Hashimoto, Hisao

Journal:

Japanese Journal of Applied Physics

Année:

1984

Langue:

english

Fichier:

PDF, 207 KB

english, 1984

Reduced Damage Generation in GaAs Implanted with Focused Be Ions

Bamba, Yasuo, Miyauchi, Eizo, Arimoto, Hiroshi, Takamori, Akira, Hashimoto, Hisao

Journal:

Japanese Journal of Applied Physics

Année:

1984

Fichier:

PDF, 481 KB

1984

Fabrication of Submicron Grating Patterns Usinc Compositional Disordering of AlGaAs-GaAs Superlattices by Focused Si Ion Beam Implantation

Ishida, Koji, Miyauchi, Eizo, Morita, Tetsuo, Takamori, Takeshi, Fukunaga, Toshiaki, Hashimoto, Hisao, Nakashima, Hisao

Journal:

Japanese Journal of Applied Physics

Année:

1987

Fichier:

PDF, 654 KB

1987

Alignment Signal from a Mark Deformed by Molecular Beam Epitaxial Overgrowth for Focused Ion Beam Implantation

Morita, Tetsuo, Takamori, Akira, Arimoto, Hiroshi, Miyauchi, Eizo, Hashimoto, Hisao

Journal:

Japanese Journal of Applied Physics

Année:

1987

Fichier:

PDF, 704 KB

1987

SPIE Proceedings [SPIE 1986 Microlithography Conferences - Santa Clara (Monday 10 March 1986)] Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V - Novel Submicron Isolation Technique Of Gaas Active Layer Using Fibi-Mbe

Bamba, Yasuo, Miyauchi, Eizo, Arimoto, Hiroshi, Morita, Tetsuo, Takamori, Akira, Hashimoto, Hisao, Blais, Phillip D.

Année:

1986

Langue:

english

Fichier:

PDF, 2.93 MB

english, 1986

Carrier Density Dependences of the Superconducting Transitions in n-Type In x Sn 1- x Te 1+ y

Miyauchi, Hidekazu, Nakajima, Tetsuo, Kanda, Eizo

Journal:

Journal of the Physical Society of Japan

Année:

1974

Fichier:

PDF, 192 KB

1974